Stability of trions in strongly spin-polarized two-dimensional electron gases

Low-temperature magneto-photoluminescence studies of negatively charged excitons (X- trions) are reported for n-type modulation-doped ZnSe/Zn(Cd,Mn)Se quantum wells over a wide range of Fermi energy and spin-splitting. The magnetic composition is chosen such that these magnetic two-dimensional electron gases (2DEGs) are highly spin-polarized even at low magnetic fields, throughout the entire range of electron densities studied (5e10 to 6.5e11 cm^-2). This spin polarization has a pronounced effect on the formation and energy of X-, with the striking result that the trion ionization energy (the energy separating X- from the neutral exciton) follows the temperature- and magnetic field-tunable Fermi energy. The large Zeeman energy destabilizes X- at the nu=1 quantum limit, beyond which a new PL peak appears and persists to 60 Tesla, suggesting the formation of spin-triplet charged excitons.Comment: 5 pages (RevTex), 4 embedded EPS figs. Submitted to PRB-R

Landau Level Crossings and Extended-State Mapping in Magnetic Two-dimensional Electron Gases

We present longitudinal and Hall magneto-resistance measurements of a ``magnetic'' two-dimensional electron gas (2DEG) formed in modulation-doped Zn$_{1-x-y}$Cd$_{x}$Mn$_{y}$Se quantum wells. The electron spin splitting is temperature and magnetic field dependent, resulting in striking features as Landau levels of opposite spin cross near the Fermi level. Magnetization measurements on the same sample probe the total density of states and Fermi energy, allowing us to fit the transport data using a model involving extended states centered at each Landau level and two-channel conduction for spin-up and spin-down electrons. A mapping of the extended states over the whole quantum Hall effect regime shows no floating of extended states as Landau levels cross near the Fermi level.Comment: 10 pages, 4 figures, submitted to Phys. Rev.

Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies

In this article we report on two dimensional sheet charge and mobility in GaN/AlGaN heterostructure field effect transistors. Both experimental and theoretical results are presented. Experimental results are reported on samples grown by metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). Theoretical studies are done to examine how spontaneous polarization and piezoelectric effect control the sheet charge density. The studies also focus on how interface roughness, aluminum mole fraction in the barrier and phonon scattering influence mobility. We find that interface roughness is a dominant source of scattering in the samples reported. Due to the variation in growth techniques we find that the MBE samples have a smoother interface compared to the MOCVD samples. By carefully fitting the experimental data we present results on interface roughness parameters for MBE and MOCVD samples. © 2000 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70927/2/JAPIAU-87-11-7981-1.pd

Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities

A giant negative magnetoresistance has been observed in bulk germanium doped with multiply charged deep impurities. Applying a magnetic field the resistance may decrease exponentially at any orientation of the field. A drop of the resistance as much as about 10000% has been measured at 6 T. The effect is attributed to the spin splitting of impurity ground state with a very large g-factor in the order of several tens depending on impurity.Comment: 4 pages, 4 figure

Resonant transmission of normal electrons through Andreev states in ferromagnets

Giant oscillations of the conductance of a superconductor - ferromagnet - superconductor Andreev interferometer are predicted. The effect is due to the resonant transmission of normal electrons through Andreev levels when the voltage $V$ applied to the ferromagnet is close to $2h_0/e$ ($h_0$ is the spin-dependant part of the electron energy). The effect of bias voltage and phase difference between the superconductors on the current and the differential conductance is presented. These efects allow a direct spectroscopy of Andreev levels in the ferromagnet.Comment: 4 pages, 4 figure

Interlayer coupling in ferromagnetic semiconductor superlattices

We develop a mean-field theory of carrier-induced ferromagnetism in diluted magnetic semiconductors. Our approach represents an improvement over standard RKKY model allowing spatial inhomogeneity of the system, free-carrier spin polarization, finite temperature, and free-carrier exchange and correlation to be accounted for self-consistently. As an example, we calculate the electronic structure of a Mn$_x$Ga$_{1-x}$As/GaAs superlattice with alternating ferromagnetic and paramagnetic layers and demonstrate the possibility of semiconductor magnetoresistance systems with designed properties.Comment: 4 pages, 4 figure

Phase Diagram of Diluted Magnetic Semiconductor Quantum Wells

The phase diagram of diluted magnetic semiconductor quantum wells is investigated. The interaction between the carriers in the hole gas can lead to first order ferromagnetic transitions, which remain abrupt in applied fields. These transitions can be induced by magnetic fields or, in double-layer systems by electric fields. We make a number of precise experimental predictions for observing these first order phase transitions.Comment: 4 pages, 3 figures include

Hysteretic magnetoresistance and thermal bistability in a magnetic two-dimensional hole system

Colossal negative magnetoresistance and the associated field-induced insulator-to-metal transition, the most characteristic features of magnetic semiconductors, are observed in n-type rare earth oxides and chalcogenides, p-type manganites, n-type and p-type diluted magnetic semiconductors (DMS) as well as in quantum wells of n-type DMS. Here, we report on magnetostransport studies of Mn modulation-doped InAs quantum wells, which reveal a magnetic field driven and bias voltage dependent insulator-to-metal transition with abrupt and hysteretic changes of resistance over several orders of magnitude. These phenomena coexist with the quantised Hall effect in high magnetic fields. We show that the exchange coupling between a hole and the parent Mn acceptor produces a magnetic anisotropy barrier that shifts the spin relaxation time of the bound hole to a 100 s range in compressively strained quantum wells. This bistability of the individual Mn acceptors explains the hysteretic behaviour while opening prospects for information storing and processing. At high bias voltage another bistability, caused by the overheating of electrons10, gives rise to abrupt resistance jumps

Polarity in GaN and ZnO: Theory, measurement, growth, and devices

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Rev. 3, 041303 (2016) and may be found at https://doi.org/10.1063/1.4963919.The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence of a spontaneous electric polarization within these materials and their associated alloys (Ga,Al,In)N and (Zn,Mg,Cd)O. The polarity has also important consequences on the stability of the different crystallographic surfaces, and this becomes especially important when considering epitaxial growth. Furthermore, the internal polarization fields may adversely affect the properties of optoelectronic devices but is also used as a potential advantage for advanced electronic devices. In this article, polarity-related issues in GaN and ZnO are reviewed, going from theoretical considerations to electronic and optoelectronic devices, through thin film, and nanostructure growth. The necessary theoretical background is first introduced and the stability of the cation and anion polarity surfaces is discussed. For assessing the polarity, one has to make use of specific characterization methods, which are described in detail. Subsequently, the nucleation and growth mechanisms of thin films and nanostructures, including nanowires, are presented, reviewing the specific growth conditions that allow controlling the polarity of such objects. Eventually, the demonstrated and/or expected effects of polarity on the properties and performances of optoelectronic and electronic devices are reported. The present review is intended to yield an in-depth view of some of the hot topics related to polarity in GaN and ZnO, a fast growing subject over the last decade